University Grants Commission organized the National Eligibility Test (NET) on 08 September 2013 at various centers across the country. UGC had to organise the NET June 2013 again on 08th September 2013 at Delhi and Ranchi Centers due to mis-management and aggression of students.
Click here for UGC NET September 2013: Question Papers: Electronic Science Paper II
Click here for UGC NET September 2013: Answer Keys: Electronic Science Paper II
UGC NET September 2013: Question Papers with Answer Keys: Electronic Science Paper II has been arranged by the Jargranjosh.com in order to make available the same to the candidates who could not appear the UGC NET September 2013 but preparing or aspiring for the same. It is also useful for State Level Eligibility Test (SLET) of different states.
1. The p-n junction diode is a
(A) Passive device
(B) Vacuum device
(C) Unilateral device
(D) Bilateral device
2. A semiconductor has ______ temperature co-efficient of resistance
3. A JFET has
(A) One built-in diode
(B) Two built-in diode
(C) Three built-in diode
(D) Four built-in diode