# Semi Conductor Electronics Material Devices and Simple Circuit-CBSE Class 12th NCERT Solution

Get, detailed solutions to the questions of the chapter Semi Conductor Electronics Material Devices and Simple Circuit from NCERT textbooks

Created On: Aug 31, 2013 17:32 IST
Modified On: Jun 5, 2018 12:25 IST Get, detailed solutions to the questions of the chapter Semi Conductor Electronics Material Devices and Simple Circuit from NCERT textbooks. The objective is to helping students regarding the pattern of answering the question as per the cbse latest marking scheme.Cbse.jagranjosh.com provided you NCERT solutions for classes 12th math and science subjects.

Some questions of this chapter are given here.

Q. In an n-type silicon, which of the following statement is true:
a) Electrons are majority carriers and trivalent atoms are the dopants.
b) Electrons are minority carriers and pentavalent atoms are the dopants.
c) Holes are minority carriers and pentavalent atoms are the dopants.
d) Holes are majority carriers and trivalent atoms are the dopants.

Sol.  (c)

Q. Which of the statements given in Exercise 14.1 is true for p-type semiconductors.

Sol. (d)

Q. Carbon, silicon and germanium have four valence electrons each.These are characterised by valence and conduction bands separated by energy band gap respectively equal to (Eg)C, (Eg)Si and (Eg)Ge. Which of the following statements is true?
a) (Eg)Si < (Eg)Ge< (Eg)C
b) (Eg)C < (Eg)Ge> (Eg)Si
c) (Eg)C > (Eg)Si > (Eg)Ge
d) (Eg)C = (Eg)Si = (Eg)Ge

Sol. (c)

Q. For transistor action, which of the following statements are correct:
a) Base, emitter and collector regions should have similar size and doping concentrations.
b) The base region must be very thin and lightly doped.
c) The emitter junction is forward biased and collector junction is reverse biased.
d) Both the emitter junction as well as the collector junction is forward biased.

Sol. (b), (c)

Q.
In an unbiased p-n junction, holes diffuse from the p-region ton-region because
a) free electrons in the n-region attract them.
b) they move across the junction by the potential difference.
c) hole concentration in p-region is more as compared to n-region.
d) All the above.

Sol. (c)

Q. When a forward bias is applied to a p-n junction, it
a) Raises the potential barrier.
b) Reduces the majority carrier current to zero.
c) Lowers the potential barrier.
d) None of the above.

Sol. (c)